All MOSFET. FDMS7600AS Datasheet

 

FDMS7600AS MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMS7600AS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 ┬░C

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: POWER56

FDMS7600AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS7600AS Datasheet (PDF)

1.1. fdms7600as.pdf Size:464K _fairchild_semi

FDMS7600AS
FDMS7600AS

December 2009 FDMS7600AS Dual N-Channel PowerTrench« MOSFET N-Channel: 30 V, 30 A, 7.5 m? N-Channel: 30 V, 40 A, 2.8 m? Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m? at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous

3.1. fdms7602s.pdf Size:400K _fairchild_semi

FDMS7600AS
FDMS7600AS

August 2010 FDMS7602S Dual N-Channel PowerTrench« MOSFET Q1: 30 V, 30 A, 7.5 m? Q2: 30 V, 30 A, 5.0 m? Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m? at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(on) = 12

3.2. fdms7606.pdf Size:392K _fairchild_semi

FDMS7600AS
FDMS7600AS

´╗┐May 2011 FDMS7606 Dual N-Channel PowerTrench┬« MOSFET Q1: 30 V, 12 A, 11.4 m╬ę Q2: 30 V, 22 A, 11.6 m╬ę Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m╬ę at VGS = 10 V, ID = 11.5 A connected to enable easy placement and routing of synchronous Max rDS(

3.3. fdms7608s.pdf Size:399K _fairchild_semi

FDMS7600AS
FDMS7600AS

´╗┐June 2011 FDMS7608S Dual N-Channel PowerTrench┬« MOSFET Q1: 30 V, 22 A, 10.0 m╬ę Q2: 30 V, 30 A, 6.3 m╬ę Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m╬ę at VGS = 10 V, ID = 12 A connected to enable easy placement and routing of synchronous Max rDS(

Datasheet: FDMS6681Z , FDMS7556S , FDMS7558S , FDMS7560S , FDMS7570S , FDMS7572S , FDMS7578 , FDMS7580 , IRF9Z34 , STM8360T , FDMS7602S , STM8358S , FDMS7606 , STM8330 , FDMS7608S , STM8324 , FDMS7620S .

 


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