All MOSFET. FDMS7600AS Datasheet

 

FDMS7600AS Datasheet and Replacement


   Type Designator: FDMS7600AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: POWER56
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FDMS7600AS Datasheet (PDF)

 ..1. Size:464K  fairchild semi
fdms7600as.pdf pdf_icon

FDMS7600AS

December 2009FDMS7600ASDual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 m N-Channel: 30 V, 40 A, 2.8 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synch

 7.1. Size:399K  fairchild semi
fdms7608s.pdf pdf_icon

FDMS7600AS

June 2011FDMS7608SDual N-Channel PowerTrench MOSFET Q1: 30 V, 22 A, 10.0 m Q2: 30 V, 30 A, 6.3 m Features General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 10.0 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(

 7.2. Size:392K  fairchild semi
fdms7606.pdf pdf_icon

FDMS7600AS

May 2011FDMS7606Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 m Q2: 30 V, 22 A, 11.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally Max rDS(on) = 11.4 m at VGS = 10 V, ID = 11.5 Aconnected to enable easy placement and routing of synchronous Max rDS(

 7.3. Size:400K  fairchild semi
fdms7602s.pdf pdf_icon

FDMS7600AS

August 2010FDMS7602SDual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 m Q2: 30 V, 30 A, 5.0 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally Max rDS(on) = 7.5 m at VGS = 10 V, ID = 12 Aconnected to enable easy placement and routing of synchronous Max rDS(on

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: APM4050PU | STP25N06 | AOD454 | RJK1525DPE | OSG60R099FEZF | AP6980GN2-HF | WMB56N04T1

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