ME4920-G Datasheet and Replacement
Type Designator: ME4920-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOP8
ME4920-G substitution
ME4920-G Datasheet (PDF)
me4920 me4920-g.pdf

ME4920/ME4920-G Dual N-Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)35 m@VGS=10V The ME4920 is the N-Channel logic enhancement mode power field RDS(ON)45 m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to
me4925 me4925-g.pdf

ME4925/ME4925-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4925 is the Dual P-Channel logic enhancement mode power RDS(ON)22m@VGS=-10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)30m@VGS=-4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely
me4925.pdf

ME4925www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1 8
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRF624S
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History: IRF624S



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