ME4920-G Datasheet and Replacement. Cross Reference Search

ME4920-G Datasheet (PDF)

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ME4920/ME4920-G Dual N-Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)35 m@VGS=10V The ME4920 is the N-Channel logic enhancement mode power field RDS(ON)45 m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

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ME4925/ME4925-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4925 is the Dual P-Channel logic enhancement mode power RDS(ON)22m@VGS=-10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)30m@VGS=-4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely

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ME4925www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1 8

Datasheet: ME4832 , ME4832-G , ME4856 , ME4856-G , ME4894 , ME4894-G , ME4906-G , ME4920 , 10N60 , ME4947 , ME4947-G , ME4970A , ME4970A-G , ME4972-G , ME50N02 , ME50N02-G , ME50N10 .