ME50N10 Specs and Replacement

Type Designator: ME50N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85.7 nS

Cossⓘ - Output Capacitance: 427 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252

ME50N10 substitution

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ME50N10 datasheet

 ..1. Size:1266K  matsuki electric
 me50n10 me50n10-g.pdf pdf_icon

ME50N10

ME50N10 / ME50N10-G N- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 17m @VGS=10V The ME50N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi... See More ⇒

 9.1. Size:1050K  matsuki electric
 me50n02 me50n02-g.pdf pdf_icon

ME50N10

ME50N02 / ME50N02-G N- Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 8m @VGS=10V The ME50N02 is the N-Channel logic enhancement mode power RDS(ON) 9m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 12m @VGS=2.5V trench technology. This high density process is especially tailored to Super high den... See More ⇒

 9.2. Size:1250K  matsuki electric
 me50n75t me50n75t-g.pdf pdf_icon

ME50N10

ME50N75T/ME50N75T-G N-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 26m @VGS=10V The ME50N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit... See More ⇒

 9.3. Size:1310K  matsuki electric
 me50n06a me50n06a-g.pdf pdf_icon

ME50N10

ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON) 22m @VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi... See More ⇒

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Detailed specifications: ME4920-G, ME4947, ME4947-G, ME4970A, ME4970A-G, ME4972-G, ME50N02, ME50N02-G, P55NF06, ME50N10-G, ME55N06, ME55N06-G, ME5602D-G, ME60N03S, ME60N03S-G, ME60N04, ME60N04-G

Keywords - ME50N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.