ME7232 Datasheet and Replacement
Type Designator: ME7232
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50.8 nS
Cossⓘ - Output Capacitance: 187 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: DFN2X2
ME7232 substitution
ME7232 Datasheet (PDF)
me7232 me7232-g.pdf
ME7232/ME7232-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)4.5 m@VGS=10VThe ME7232-G is the N-Channel logic enhancement mode power RDS(ON)6.8 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
me7232s-g.pdf
ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
me7232s me7232s-g.pdf
ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
Datasheet: ME6606D-G , ME6612D-G , ME6874 , ME6874-G , ME70N03S , ME70N03S-G , ME70N10T , ME70N10T-G , SKD502T , ME7232-G , ME7232S , ME7232S-G , ME7306-G , ME7345-G , ME7356-G , ME7362 , ME7362-G .
Keywords - ME7232 MOSFET datasheet
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