ME7232 Datasheet and Replacement
Type Designator: ME7232
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50.8 nS
Cossⓘ - Output Capacitance: 187 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: DFN2X2
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ME7232 Datasheet (PDF)
me7232 me7232-g.pdf
ME7232/ME7232-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)4.5 m@VGS=10VThe ME7232-G is the N-Channel logic enhancement mode power RDS(ON)6.8 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
me7232s-g.pdf
ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
me7232s me7232s-g.pdf
ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FQD11P06TM | SVGP20110NSTR | AOSP66406 | MXP4004AT | F5032 | AONS36312 | MEE42942-G
Keywords - ME7232 MOSFET datasheet
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History: FQD11P06TM | SVGP20110NSTR | AOSP66406 | MXP4004AT | F5032 | AONS36312 | MEE42942-G
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