ME7232S MOSFET. Datasheet pdf. Equivalent
Type Designator: ME7232S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 68.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50.8 nS
Cossⓘ - Output Capacitance: 187 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DFN3X3
ME7232S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME7232S Datasheet (PDF)
me7232s me7232s-g.pdf
ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
me7232s-g.pdf
ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5 m@VGS=10VThe ME7232S-G is the N-Channel logic enhancement mode power RDS(ON)7 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
me7232 me7232-g.pdf
ME7232/ME7232-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)4.5 m@VGS=10VThe ME7232-G is the N-Channel logic enhancement mode power RDS(ON)6.8 m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
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