All MOSFET. ME7607 Datasheet

 

ME7607 Datasheet and Replacement


   Type Designator: ME7607
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 652 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: POWERDFN5X6
 

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ME7607 Datasheet (PDF)

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 me7607 me7607-g.pdf pdf_icon

ME7607

ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME7607 is the P-Channel logic enhancement mode power field RDS(ON)6m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)9m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design

Datasheet: ME7345-G , ME7356-G , ME7362 , ME7362-G , ME7423S-G , ME7442D-G , ME75N03 , ME75N03-G , STP80NF70 , ME7607-G , ME7620 , ME7620-G , ME7632 , ME7632-G , ME7632S , ME7632S-G , ME7636 .

History: AP50P04DF | AM50P06-15D

Keywords - ME7607 MOSFET datasheet

 ME7607 cross reference
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