All MOSFET. ME7607 Datasheet

 

ME7607 Datasheet and Replacement


   Type Designator: ME7607
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 164 nS
   Cossⓘ - Output Capacitance: 652 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: POWERDFN5X6
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ME7607 Datasheet (PDF)

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 me7607 me7607-g.pdf pdf_icon

ME7607

ME7607/ME7607-G P-Channel 35V Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME7607 is the P-Channel logic enhancement mode power field RDS(ON)6m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)9m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFL39N90 | WMB35P04T1 | FQPF44N08T | ME8029 | IXFN40N90P | RZR040P01 | WMB025N06LG4

Keywords - ME7607 MOSFET datasheet

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