ME7644 Specs and Replacement
Type Designator: ME7644
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 192 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75.5 nS
Cossⓘ - Output Capacitance: 1549 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00096 Ohm
Package: POWERDFN5X6
ME7644 substitution
- MOSFET ⓘ Cross-Reference Search
ME7644 datasheet
me7644 me7644-g.pdf
ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON) 0.96m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 1.98m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremel... See More ⇒
me7642 me7642-g.pdf
ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON) 4m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 5.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme... See More ⇒
me7640 me7640-g.pdf
ME7640/ME7640-G N-Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7640 is the N-Channel logic enhancement mode power field RDS(ON) 1.35 m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 2 m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RD... See More ⇒
me7648 me7648-g.pdf
Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design f... See More ⇒
Detailed specifications: ME7632S, ME7632S-G, ME7636, ME7636-G, ME7640, ME7640-G, ME7642, ME7642-G, 18N50, ME7644-G, ME7648, ME7648-G, ME7648S, ME7648S-G, ME7686, ME7686-G, ME7705
Keywords - ME7644 MOSFET specs
ME7644 cross reference
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