ME7644-G
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME7644-G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 192
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 209
nC
trⓘ - Rise Time: 75.5
nS
Cossⓘ -
Output Capacitance: 1549
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00096
Ohm
Package: POWERDFN5X6
ME7644-G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME7644-G
Datasheet (PDF)
..1. Size:2202K matsuki electric
me7644 me7644-g.pdf 
ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON)0.96m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)1.98m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremel
9.1. Size:1008K matsuki electric
me7642 me7642-g.pdf
ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON)4m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme
9.2. Size:1062K matsuki electric
me7640 me7640-g.pdf
ME7640/ME7640-G N-Channel 40V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7640 is the N-Channel logic enhancement mode power field RDS(ON) 1.35 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 2 m @VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RD
9.3. Size:1657K matsuki electric
me7648 me7648-g.pdf
Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f
9.4. Size:870K matsuki electric
me7648s me7648s-g.pdf
ME7648S/ME7648S-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7648S is the N-Channel logic enhancement mode power RDS(ON) 3.1m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS (ON) 5.5 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extrem
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