ME7648-G Specs and Replacement

Type Designator: ME7648-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 424 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: POWERDFN5X6

ME7648-G substitution

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ME7648-G datasheet

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ME7648-G

Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design f... See More ⇒

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 me7648s me7648s-g.pdf pdf_icon

ME7648-G

ME7648S/ME7648S-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7648S is the N-Channel logic enhancement mode power RDS(ON) 3.1m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS (ON) 5.5 m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extrem... See More ⇒

 9.1. Size:2202K  matsuki electric
 me7644 me7644-g.pdf pdf_icon

ME7648-G

ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON) 0.96m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 1.98m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremel... See More ⇒

 9.2. Size:1008K  matsuki electric
 me7642 me7642-g.pdf pdf_icon

ME7648-G

ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON) 4m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 5.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme... See More ⇒

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Detailed specifications: ME7636-G, ME7640, ME7640-G, ME7642, ME7642-G, ME7644, ME7644-G, ME7648, IRF2807, ME7648S, ME7648S-G, ME7686, ME7686-G, ME7705, ME7705-G, ME7707, ME7707-G

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