All MOSFET. ME7648-G Datasheet

 

ME7648-G Datasheet and Replacement


   Type Designator: ME7648-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 94 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 424 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: POWERDFN5X6
 

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ME7648-G Datasheet (PDF)

 ..1. Size:1657K  matsuki electric
 me7648 me7648-g.pdf pdf_icon

ME7648-G

Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f

 8.1. Size:870K  matsuki electric
 me7648s me7648s-g.pdf pdf_icon

ME7648-G

ME7648S/ME7648S-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7648S is the N-Channel logic enhancement mode power RDS(ON) 3.1m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS (ON) 5.5 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extrem

 9.1. Size:2202K  matsuki electric
 me7644 me7644-g.pdf pdf_icon

ME7648-G

ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON)0.96m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)1.98m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremel

 9.2. Size:1008K  matsuki electric
 me7642 me7642-g.pdf pdf_icon

ME7648-G

ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON)4m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

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Datasheet: ME7636-G , ME7640 , ME7640-G , ME7642 , ME7642-G , ME7644 , ME7644-G , ME7648 , IRF2807 , ME7648S , ME7648S-G , ME7686 , ME7686-G , ME7705 , ME7705-G , ME7707 , ME7707-G .

History: NCE5055K | NCE3040Q | GSM2323 | 9N90G-TF1-T | SWP090R08ET

Keywords - ME7648-G MOSFET datasheet

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