ME7805S Specs and Replacement

Type Designator: ME7805S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44.1 nS

Cossⓘ - Output Capacitance: 358 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN3.3X3.3

ME7805S substitution

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ME7805S datasheet

 ..1. Size:890K  matsuki electric
 me7805s me7805s-g.pdf pdf_icon

ME7805S

ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 12m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS... See More ⇒

 9.1. Size:1296K  1
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ME7805S

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES RDS(ON) 16m @VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m @ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are... See More ⇒

 9.2. Size:959K  matsuki electric
 me7807s me7807s-g.pdf pdf_icon

ME7805S

ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒

 9.3. Size:1242K  matsuki electric
 me7804s-g.pdf pdf_icon

ME7805S

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected D GENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m @VGS=10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 25m @ VGS=4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa... See More ⇒

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Detailed specifications: ME7686, ME7686-G, ME7705, ME7705-G, ME7707, ME7707-G, ME7732-G, ME7802S-G, 7N60, ME7805S-G, ME7807S, ME7807S-G, ME78101S-G, ME7810S-G, ME7820S-G, ME78241S-G, ME7845S

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