2SK2706
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2706
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 60
nS
Cossⓘ -
Output Capacitance: 500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO3PF
FM100
2SK2706
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2706
Datasheet (PDF)
..1. Size:43K 1
2sk2706.pdf 
2SK2706External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 18 ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS DI 72
8.1. Size:42K 1
2sk2703.pdf
2SK2703External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 10 ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS DI 40
8.2. Size:43K 1
2sk2708.pdf
2SK2708External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 600 V I = 100A, V = 0V(BR) DSS D GSV 600 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 600V, V = 0VDSS DS GSI 7 ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS DI 28 A
8.3. Size:43K 1
2sk2705.pdf
2SK2705External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 450 V I = 100A, V = 0V(BR) DSS D GSV 450 VDSSI 100 nA V = 30VGSS GSV 30 VGSSI 100 A V = 450V, V = 0VDSS DS GSI 13 ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS DI 52
8.4. Size:78K 1
2sk2701 2sk2702 2sk2704 2sk2707 2sk2709.pdf
2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 2502SK1183 200 20 3 12 25 30 500 20 250 200 2.0
8.5. Size:388K toshiba
2sk2700.pdf
2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSIII) 2SK2700 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 3.7 (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancementmode : Vth =
8.6. Size:206K sanken-ele
2sk2701a.pdf
2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 2502SK2701A 450 30 7 28 35 130 100 30 100 450 2.0
8.7. Size:252K inchange semiconductor
2sk2701a.pdf
isc N-Channel MOSFET Transistor 2SK2701AFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: 2SK2554
, 2SK2586
, 2SK2684
, 2SK2701
, 2SK2702
, 2SK2703
, 2SK2704
, 2SK2705
, P55NF06
, 2SK2707
, 2SK2708
, 2SK2709
, 2SK2710
, 2SK2723
, 2SK2724
, 2SK2734
, 2SK2735
.
