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ME8117 Specs and Replacement

Type Designator: ME8117

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: SOP8

ME8117 substitution

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ME8117 datasheet

 ..1. Size:1218K  matsuki electric
 me8117 me8117-g.pdf pdf_icon

ME8117

ME8117/ME8117-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8117 is the P-Channel logic enhancement mode power field RDS(ON) 5.2m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 9.5m @VGS=-4V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O... See More ⇒

Detailed specifications: ME7910D, ME7910D-G, ME8029, ME8029-G, ME80N08AF, ME80N08AF-G, ME80N08AH, ME80N08AH-G, 20N60, ME8117-G, ME8205B, ME8205B-G, ME9435AS, ME9435AS-G, ME95N10F, ME95N10F-G, ME96N03-G

Keywords - ME8117 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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