ME8205B-G PDF and Equivalents Search

 

ME8205B-G Specs and Replacement

Type Designator: ME8205B-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.8 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSSOP8

ME8205B-G substitution

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ME8205B-G datasheet

 ..1. Size:1302K  matsuki electric
 me8205b me8205b-g.pdf pdf_icon

ME8205B-G

ME8205B/ME8205B-G N-Channel 20V(D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON) 30 m @VGS=4.5V The ME8205B-G is the N-Channel logic enhancement mode power RDS(ON) 35m @VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi... See More ⇒

 8.1. Size:1053K  matsuki electric
 me8205e me8205e-g.pdf pdf_icon

ME8205B-G

ME8205E/ME8205E-G Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8205E is the Dual N-Channel logic enhancement mode RDS(ON) 22m @VGS=4.5V power field effect transistor, produced using high cell density DMOS RDS(ON) 23m @VGS=4.0V trench technology. This high density process is especially tailored to RDS(ON) 26m @VGS=3.0V minimize on-state r... See More ⇒

 9.1. Size:256K  fairchild semi
 fdme820nzt.pdf pdf_icon

ME8205B-G

October 2013 FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32 m... See More ⇒

 9.2. Size:723K  onsemi
 fdme820nzt.pdf pdf_icon

ME8205B-G

FDME820NZT N-Channel PowerTrench MOSFET General Description 20 V, 9 A, 18 m This Single N-Channel MOSFET has been designed using Features ON Semiconductor s advanced Power Trench process to Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A leadframe. Max rDS(on) = 32 m at VG... See More ⇒

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Detailed specifications: ME8029-G, ME80N08AF, ME80N08AF-G, ME80N08AH, ME80N08AH-G, ME8117, ME8117-G, ME8205B, 50N06, ME9435AS, ME9435AS-G, ME95N10F, ME95N10F-G, ME96N03-G, MEE2348, MEE2348-G, MEE3710T

Keywords - ME8205B-G MOSFET specs

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