All MOSFET. ME95N10F-G Datasheet

 

ME95N10F-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME95N10F-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 61.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 56.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 198 nC
   trⓘ - Rise Time: 111 nS
   Cossⓘ - Output Capacitance: 868 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220F

 ME95N10F-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME95N10F-G Datasheet (PDF)

 ..1. Size:1058K  matsuki electric
 me95n10f me95n10f-g.pdf

ME95N10F-G ME95N10F-G

ME95N10F/ME95N10F-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)8.5m@VGS=10V The ME95N10F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

 9.1. Size:1244K  matsuki electric
 me95n03 me95n03-g.pdf

ME95N10F-G ME95N10F-G

ME95N03/ME95N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME95N03 is the N-Channel logic enhancement mode power RDS(ON)3.2m@VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON)4.2m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

 9.2. Size:896K  matsuki electric
 me95n03t me95n03t-g.pdf

ME95N10F-G ME95N10F-G

ME95N03T/ME95N03T-GN-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME95N03T is the N-Channel logic enhancement mode power RDS(ON)9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tail

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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