ME95N10F-G MOSFET Datasheet: N-Ch, 100V, 56.3A. Full specification with pinout and replacement list

ME95N10F-G Specs and Replacement

Type Designator: ME95N10F-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 61.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 56.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 111 nS

Cossⓘ - Output Capacitance: 868 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO220F

ME95N10F-G substitution

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ME95N10F-G datasheet

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ME95N10F/ME95N10F-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 8.5m @VGS=10V The ME95N10F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process ... See More ⇒

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me95n03 me95n03-g.pdf pdf_icon

ME95N03/ME95N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME95N03 is the N-Channel logic enhancement mode power RDS(ON) 3.2m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 4.2m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD... See More ⇒

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ME95N03T/ME95N03T-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6m @VGS=10V The ME95N03T is the N-Channel logic enhancement mode power RDS(ON) 9m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tail... See More ⇒

Detailed specifications: ME80N08AH-G, ME8117, ME8117-G, ME8205B, ME8205B-G, ME9435AS, ME9435AS-G, ME95N10F, IRF1404, ME96N03-G, MEE2348, MEE2348-G, MEE3710T, MEE3712F, MEE3712H, MEE3712T, MEE3716F

Keywords - ME95N10F-G MOSFET specs

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