MEE3710T PDF and Equivalents Search

 

MEE3710T Specs and Replacement

Type Designator: MEE3710T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 155 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO220

MEE3710T substitution

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MEE3710T datasheet

 ..1. Size:1198K  matsuki electric
 mee3710t.pdf pdf_icon

MEE3710T

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON) 23m @VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance ... See More ⇒

 7.1. Size:1279K  matsuki electric
 mee3710-g.pdf pdf_icon

MEE3710T

MEE3710-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 23m @VGS=10V The MEE3710-G is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is esp... See More ⇒

 8.1. Size:1328K  matsuki electric
 mee3712t.pdf pdf_icon

MEE3710T

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec... See More ⇒

 8.2. Size:1632K  matsuki electric
 mee3716f.pdf pdf_icon

MEE3710T

Preliminary-MEE3716F N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716F is a N-Channel enhancement mode power field effect RDS(ON) 14m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on st... See More ⇒

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Detailed specifications: ME8205B-G, ME9435AS, ME9435AS-G, ME95N10F, ME95N10F-G, ME96N03-G, MEE2348, MEE2348-G, IRFP260N, MEE3712F, MEE3712H, MEE3712T, MEE3716F, MEE3716T, MEE3718T, MEE4292-G, MEE4292HP-G

Keywords - MEE3710T MOSFET specs

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