MEE4292T MOSFET Datasheet: N-Ch, 100V, 81A. Full specification with pinout and replacement list

MEE4292T Specs and Replacement

Type Designator: MEE4292T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 81 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48.5 nS

Cossⓘ - Output Capacitance: 739 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220

MEE4292T substitution

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MEE4292T datasheet

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mee4292t.pdf pdf_icon

MEE4292T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292T is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 17.2m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) ... See More ⇒

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mee4292-g.pdf pdf_icon

MEE4292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on... See More ⇒

7.2. Size:1157K matsuki electric
mee4292ht.pdf pdf_icon

MEE4292HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and... See More ⇒

7.3. Size:918K matsuki electric
mee4292p-g.pdf pdf_icon

MEE4292P-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON 17.2m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) ... See More ⇒