MEE42942-G Datasheet and Replacement. Cross Reference Search

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MEE42942-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE42942-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

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MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely

7.2. Size:931K matsuki electric
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MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extreme

7.3. Size:1518K matsuki electric
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MEE4294-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

7.4. Size:1044K matsuki electric
mee4294t2.pdf pdf_icon

MEE4294T2 N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294T2 is a N-Channel enhancement mode power field effect RDS(ON)11.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

7.5. Size:930K matsuki electric
mee4294p-g.pdf pdf_icon

MEE4294P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294P-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

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mee4294ht.pdf pdf_icon

MEE4294HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

7.7. Size:905K matsuki electric
mee4294p2-g.pdf pdf_icon

MEE4294P2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294P2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS

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mee4294hp-g.pdf pdf_icon

MEE4294HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10VThe MEE4294HP-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistor, using Force-MOS patented Extended Trench Gate Exceptional on-resistance and maximum DC current(ETG) technology. This advanced technology is esp

MEE42942-G Datasheet (PDF)

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