All MOSFET. MEE42942-G Datasheet

 

MEE42942-G Datasheet and Replacement


   Type Designator: MEE42942-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69.5 nS
   Cossⓘ - Output Capacitance: 868 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: SOP8
 

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MEE42942-G Datasheet (PDF)

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MEE42942-G

MEE42942-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE42942-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

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MEE42942-G

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely

 7.2. Size:931K  matsuki electric
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MEE42942-G

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extreme

 7.3. Size:1518K  matsuki electric
 mee4294-g.pdf pdf_icon

MEE42942-G

MEE4294-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

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Datasheet: MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , MEE4292HT , MEE4292K-G , MEE4292P-G , MEE4292T , IRF9540 , MEE4294HP-G , MEE4294HT , MEE4294K , MEE4294K2 , MEE4294K2-G , MEE4294K-G , MEE4294P2-G , MEE4294P-G .

History: STM6928 | 3N45

Keywords - MEE42942-G MOSFET datasheet

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 MEE42942-G equivalent finder
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