MEE4294K-G MOSFET Datasheet: N-Ch, 100V, 47A. Full specification with pinout and replacement list

MEE4294K-G Specs and Replacement

Type Designator: MEE4294K-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69.5 nS

Cossⓘ - Output Capacitance: 868 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO252

MEE4294K-G substitution

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MEE4294K-G datasheet

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MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely ... See More ⇒

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MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extreme... See More ⇒

7.1. Size:1518K matsuki electric
mee4294-g.pdf pdf_icon

MEE4294-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)... See More ⇒

7.2. Size:1044K matsuki electric
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MEE4294T2 N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294T2 is a N-Channel enhancement mode power field effect RDS(ON) 11.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)... See More ⇒