MEE7296-G Datasheet. Specs and Replacement

Type Designator: MEE7296-G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69.5 nS

Cossⓘ - Output Capacitance: 868 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: POWERDFN5X6

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MEE7296-G datasheet

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MEE7296-G

MEE7296-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)... See More ⇒

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MEE7296-G

MEE72962-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O... See More ⇒

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MEE7296-G

Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m (typ.)@VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m (typ.)@VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low... See More ⇒

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MEE7296-G

MEE7292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on... See More ⇒

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Detailed specifications: MEE4294T2, MEE4298-G, MEE4298HT, MEE4298K-G, MEE4298T, MEE6240T, MEE7292-G, MEE72962-G, 12N60, MEE7298-G, MEE7630-G, MEE7636-G, MEE7816AS-G, MEE7816S-G, 2SK815, MDD2601, NCE1579C

Keywords - MEE7296-G MOSFET specs

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