HCA60R290 MOSFET Datasheet: N-Ch, 600V, 12.9A. Full specification with pinout and replacement list

HCA60R290 Specs and Replacement

Type Designator: HCA60R290

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 106 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO247

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HCA60R290 datasheet

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Dec 2020 HCA60R290 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 12.9 A Excellent stability and uniformity RDS(on), max 0.29 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit TO-247 SYMBOL Swit... See More ⇒

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Jan 2016 HCA60R150T 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) XQg) BVDSS @Tj,max 650 V Extremely low switching loss ID 22 A Excellent stability and uniformity RDS(on), max 0.15 100% Avalanche Tested Qg, Typ 41 nC Application Package & Internal Circuit Switch Mode Power Supply (SMPS) TO-247 Uninterruptib... See More ⇒

8.2. Size:486K 1
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July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 42 A Excellent stability and uniformity RDS(on), max 70 m 100% Avalanche Tested Fast Recovery Time Qg, Typ 106 nC Application Package & Internal Circuit TO-247 SYMBOL Swit... See More ⇒

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