HCA90R300 Specs and Replacement
Type Designator: HCA90R300
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO247
HCA90R300 substitution
- MOSFET ⓘ Cross-Reference Search
HCA90R300 datasheet
hca90r300.pdf
Apr 2023 HCA90R300 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 14.5 A Excellent stability and uniformity RDS(on), max 0.3 100% Avalanche Tested Built-in ESD Diode Qg, Typ 43 nC Application Package & Internal Circuit TO-247 SYMBOL Switc... See More ⇒
hca90r800.pdf
Apr. 2023 HCA90R800 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 6.7 A Excellent stability and uniformity RDS(on), max 0.8 100% Avalanche Tested Built-in ESD Diode Qg, Typ 17.4 nC Application Package & Internal Circuit TO-247 SYMBOL Swi... See More ⇒
hca90r450.pdf
Apr 2023 HCA90R450 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 10.7 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit TO-247 SYMBOL Swit... See More ⇒
Detailed specifications: MS5N100S, MS5N100FT, MS5N100FE, MS5N100FD, SJMN600R70F, HCA60R290, HCA65R165, HCA70R180, RFP50N06, HCA90R450, HCA90R800, HCD60R260, HCD60R490, HCD60R750, HCD60R900, HCD65R2K2, HCD65R2K7
Keywords - HCA90R300 MOSFET specs
HCA90R300 cross reference
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