HCD60R750 MOSFET Datasheet: N-Ch, 600V, 5.8A. Full specification with pinout and replacement list

HCD60R750 Specs and Replacement

Type Designator: HCD60R750

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: DPAK

HCD60R750 substitution

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HCD60R750 datasheet

..1. Size:436K semihow
hcd60r750.pdf pdf_icon

July 2020 HCD60R750 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 5.8 A Excellent stability and uniformity RDS(on), max 0.75 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit D-PAK SYMBOL Swi... See More ⇒

8.1. Size:368K semihow
hcd60r900.pdf pdf_icon

June 2019 HCD60R900 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 5.0 A Excellent stability and uniformity RDS(on), max 0.9 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.3 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

8.2. Size:437K semihow
hcd60r490.pdf pdf_icon

April 2020 HCD60R490 60V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 8 A Excellent stability and uniformity RDS(on), max 0.49 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit D-PAK SYMBOL Switch ... See More ⇒

8.3. Size:418K semihow
hcd60r260.pdf pdf_icon

Sep 2020 HCD60R260 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 14.4 A Excellent stability and uniformity RDS(on), max 0.26 100% Avalanche Tested Built-in ESD Diode Qg, Typ 31 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

Detailed specifications: HCA60R290, HCA65R165, HCA70R180, HCA90R300, HCA90R450, HCA90R800, HCD60R260, HCD60R490, IRF520, HCD60R900, HCD65R2K2, HCD65R2K7, HCD65R450, HCD65R830, HCD70R910, HCD80R1K2, HCD80R1K4