HCD80R1K4 MOSFET Datasheet: N-Ch, 800V, 4A. Full specification with pinout and replacement list

HCD80R1K4 Specs and Replacement

Type Designator: HCD80R1K4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: DPAK

HCD80R1K4 substitution

- MOSFET ⓘ Cross-Reference Search

HCD80R1K4 datasheet

..1. Size:415K semihow
hcd80r1k4.pdf pdf_icon

Sep 2020 HCD80R1K4 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.0 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit D-PAK SYMBOL Switch... See More ⇒

6.1. Size:416K semihow
hcd80r1k2.pdf pdf_icon

Sep 2020 HCD80R1K2 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

Detailed specifications: HCD60R750, HCD60R900, HCD65R2K2, HCD65R2K7, HCD65R450, HCD65R830, HCD70R910, HCD80R1K2, AO3400A, HCD90R1K0, HCD90R1K6, HCD90R450, HCD90R800, HCF65R320, HCF65R550, HCF70R360, HCF70R600