All MOSFET. HCD80R1K4 Datasheet

 

HCD80R1K4 Datasheet and Replacement


   Type Designator: HCD80R1K4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DPAK
 

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HCD80R1K4 Datasheet (PDF)

 ..1. Size:415K  semihow
 hcd80r1k4.pdf pdf_icon

HCD80R1K4

Sep 2020HCD80R1K4800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch

 6.1. Size:416K  semihow
 hcd80r1k2.pdf pdf_icon

HCD80R1K4

Sep 2020HCD80R1K2800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switc

Datasheet: HCD60R750 , HCD60R900 , HCD65R2K2 , HCD65R2K7 , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 , P60NF06 , HCD90R1K0 , HCD90R1K6 , HCD90R450 , HCD90R800 , HCF65R320 , HCF65R550 , HCF70R360 , HCF70R600 .

History: IRLML6402G | AO7411 | MXP4002AT | FQD20N06LE | HFP50N06V | IRLML6402TRPBF | KF4N20LI

Keywords - HCD80R1K4 MOSFET datasheet

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