HCD90R1K0 PDF and Equivalents Search

 

HCD90R1K0 Specs and Replacement

Type Designator: HCD90R1K0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 13.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: DPAK

HCD90R1K0 substitution

- MOSFET ⓘ Cross-Reference Search

 

HCD90R1K0 datasheet

 ..1. Size:595K  semihow
 hcd90r1k0.pdf pdf_icon

HCD90R1K0

Apr. 2023 HCD90R1K0 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 1.0 100% Avalanche Tested Built-in ESD Diode Qg, Typ 13.7 nC Application Package & Internal Circuit D-PAK SYMBOL Swit... See More ⇒

 6.1. Size:594K  semihow
 hcd90r1k6.pdf pdf_icon

HCD90R1K0

Apr. 2023 HCD90R1K6 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 3.8 A Excellent stability and uniformity RDS(on), max 1.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

 8.1. Size:596K  semihow
 hcd90r450.pdf pdf_icon

HCD90R1K0

Apr 2023 HCD90R450 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 10.7 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

 8.2. Size:595K  semihow
 hcd90r800.pdf pdf_icon

HCD90R1K0

Apr. 2023 HCD90R800 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 6.7 A Excellent stability and uniformity RDS(on), max 0.8 100% Avalanche Tested Built-in ESD Diode Qg, Typ 17.4 nC Application Package & Internal Circuit D-PAK SYMBOL Swit... See More ⇒

SHOW MORE

Detailed specifications: HCD60R900, HCD65R2K2, HCD65R2K7, HCD65R450, HCD65R830, HCD70R910, HCD80R1K2, HCD80R1K4, IRFB31N20D, HCD90R1K6, HCD90R450, HCD90R800, HCF65R320, HCF65R550, HCF70R360, HCF70R600, HCF70R910

Keywords - HCD90R1K0 MOSFET specs

 HCD90R1K0 cross reference

 HCD90R1K0 equivalent finder

 HCD90R1K0 pdf lookup

 HCD90R1K0 substitution

 HCD90R1K0 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.