All MOSFET. HCFL60R150 Datasheet

 

HCFL60R150 Datasheet and Replacement


   Type Designator: HCFL60R150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 171 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: DFN8X8
 

 HCFL60R150 substitution

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HCFL60R150 Datasheet (PDF)

 ..1. Size:433K  semihow
 hcfl60r150.pdf pdf_icon

HCFL60R150

May 2020HCFL60R150600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.7 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Sw

 6.1. Size:434K  semihow
 hcfl60r115.pdf pdf_icon

HCFL60R150

May 2020HCFL60R115600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 26.9 A Excellent stability and uniformityRDS(on), max 127 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 6.2. Size:433K  semihow
 hcfl60r190.pdf pdf_icon

HCFL60R150

May 2020HCFL60R190600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 17.9 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.1. Size:413K  semihow
 hcfl60r290.pdf pdf_icon

HCFL60R150

May 2020HCFL60R290600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 13.1 A Excellent stability and uniformityRDS(on), max 0.32 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

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Datasheet: HCD90R450 , HCD90R800 , HCF65R320 , HCF65R550 , HCF70R360 , HCF70R600 , HCF70R910 , HCFL60R115 , AON7403 , HCFL60R190 , HCFL60R290 , HCFL60R350 , HCFL65R130 , HCFL65R210 , HCFL65R380 , HCFL65R550 , HCFL70R180 .

History: FDMS3600S | SMF10N65 | TDM3405 | FC4B22180L | IPP05CN10N | IAUS200N08S5N023 | NTMFS5C430NLT1G

Keywords - HCFL60R150 MOSFET datasheet

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