HCFL60R190 PDF and Equivalents Search

 

HCFL60R190 Specs and Replacement

Type Designator: HCFL60R190

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 149 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: DFN8X8

HCFL60R190 substitution

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HCFL60R190 datasheet

 ..1. Size:433K  semihow
 hcfl60r190.pdf pdf_icon

HCFL60R190

May 2020 HCFL60R190 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 17.9 A Excellent stability and uniformity RDS(on), max 0.21 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi... See More ⇒

 6.1. Size:433K  semihow
 hcfl60r150.pdf pdf_icon

HCFL60R190

May 2020 HCFL60R150 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 21.7 A Excellent stability and uniformity RDS(on), max 0.165 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit DFN8x8 SYMBOL Sw... See More ⇒

 6.2. Size:434K  semihow
 hcfl60r115.pdf pdf_icon

HCFL60R190

May 2020 HCFL60R115 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 26.9 A Excellent stability and uniformity RDS(on), max 127 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 65 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi... See More ⇒

 7.1. Size:413K  semihow
 hcfl60r290.pdf pdf_icon

HCFL60R190

May 2020 HCFL60R290 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 13.1 A Excellent stability and uniformity RDS(on), max 0.32 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi... See More ⇒

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Detailed specifications: HCD90R800, HCF65R320, HCF65R550, HCF70R360, HCF70R600, HCF70R910, HCFL60R115, HCFL60R150, K2611, HCFL60R290, HCFL60R350, HCFL65R130, HCFL65R210, HCFL65R380, HCFL65R550, HCFL70R180, HCFL70R360

Keywords - HCFL60R190 MOSFET specs

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