HCP65R130 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCP65R130
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 179 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 65 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 61 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO220
HCP65R130 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCP65R130 Datasheet (PDF)
hcp65r130.pdf
Dec 2019HCP65R130650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 25 A Excellent stability and uniformityRDS(on), max 130 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Switch
hcp65r165.pdf
Dec 2019HCP65R165650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi
hcp65r110.pdf
Dec 2019HCP65R110650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 29.1 A Excellent stability and uniformityRDS(on), max 110 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit
hcp65r210.pdf
Nov 2020HCP65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 16.8 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit
hcp65r320.pdf
June 2021HCP65R320650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 12.3 A Excellent stability and uniformityRDS(on), max 0.32 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CS12N65P
