All MOSFET. HCP65R130 Datasheet

 

HCP65R130 Datasheet and Replacement


   Type Designator: HCP65R130
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220
 

 HCP65R130 substitution

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HCP65R130 Datasheet (PDF)

 ..1. Size:359K  semihow
 hcp65r130.pdf pdf_icon

HCP65R130

Dec 2019HCP65R130650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 25 A Excellent stability and uniformityRDS(on), max 130 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Switch

 7.1. Size:358K  semihow
 hcp65r165.pdf pdf_icon

HCP65R130

Dec 2019HCP65R165650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi

 7.2. Size:358K  semihow
 hcp65r110.pdf pdf_icon

HCP65R130

Dec 2019HCP65R110650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 29.1 A Excellent stability and uniformityRDS(on), max 110 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit

 8.1. Size:631K  semihow
 hcp65r210.pdf pdf_icon

HCP65R130

Nov 2020HCP65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 16.8 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit

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Datasheet: HCFL80R250 , HCFL80R380 , HCI60R150 , HCI70R230 , HCI70R360 , HCI70R600 , HCP60R099 , HCP65R110 , 50N06 , HCP65R165 , HCP65R210 , HCP65R320 , HCP90R300 , HCP90R450 , HCP90R800 , HCS60R099 , HCS60R099ST .

History: RT3U33M | 2SK1590C | UFZ24NL-TM3 | TK130F06K3 | DMP2160UW | AP9980GH-HF | AP99LT06GI-HF

Keywords - HCP65R130 MOSFET datasheet

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