All MOSFET. HCP65R165 Datasheet

 

HCP65R165 Datasheet and Replacement


   Type Designator: HCP65R165
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO220
 

 HCP65R165 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HCP65R165 Datasheet (PDF)

 ..1. Size:358K  semihow
 hcp65r165.pdf pdf_icon

HCP65R165

Dec 2019HCP65R165650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi

 7.1. Size:358K  semihow
 hcp65r110.pdf pdf_icon

HCP65R165

Dec 2019HCP65R110650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 29.1 A Excellent stability and uniformityRDS(on), max 110 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit

 7.2. Size:359K  semihow
 hcp65r130.pdf pdf_icon

HCP65R165

Dec 2019HCP65R130650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 25 A Excellent stability and uniformityRDS(on), max 130 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Switch

 8.1. Size:631K  semihow
 hcp65r210.pdf pdf_icon

HCP65R165

Nov 2020HCP65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 16.8 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit

SHOW MORE

Datasheet: HCFL80R380 , HCI60R150 , HCI70R230 , HCI70R360 , HCI70R600 , HCP60R099 , HCP65R110 , HCP65R130 , IRF640 , HCP65R210 , HCP65R320 , HCP90R300 , HCP90R450 , HCP90R800 , HCS60R099 , HCS60R099ST , HCS60R150ST .

Keywords - HCP65R165 MOSFET datasheet

 HCP65R165 cross reference
 HCP65R165 equivalent finder
 HCP65R165 lookup
 HCP65R165 substitution
 HCP65R165 replacement

 

 
Back to Top

 


 
.