HCP90R300 Datasheet and Replacement
Type Designator: HCP90R300
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220
HCP90R300 substitution
HCP90R300 Datasheet (PDF)
hcp90r300.pdf

Jun. 2023HCP90R300900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 14.5 A Excellent stability and uniformityRDS(on), max 0.3 100% Avalanche Tested Built-in ESD DiodeQg, Typ 43 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit
hcp90r450.pdf

Jun. 2023HCP90R450900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 10.7 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi
hcp90r800.pdf

Jun. 2023HCP90R800900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.8 100% Avalanche Tested Built-in ESD DiodeQg, Typ 17.4 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi
Datasheet: HCI70R360 , HCI70R600 , HCP60R099 , HCP65R110 , HCP65R130 , HCP65R165 , HCP65R210 , HCP65R320 , IRF1404 , HCP90R450 , HCP90R800 , HCS60R099 , HCS60R099ST , HCS60R150ST , HCS60R260S , HCS60R260ST , HCS60R900S .
History: HCP90R800 | 2SK2054 | IPD50R650CE | WMB140NV6LG4
Keywords - HCP90R300 MOSFET datasheet
HCP90R300 cross reference
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HCP90R300 substitution
HCP90R300 replacement
History: HCP90R800 | 2SK2054 | IPD50R650CE | WMB140NV6LG4



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