HCP90R300 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCP90R300
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220
HCP90R300 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCP90R300 Datasheet (PDF)
hcp90r300.pdf
Jun. 2023HCP90R300900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 14.5 A Excellent stability and uniformityRDS(on), max 0.3 100% Avalanche Tested Built-in ESD DiodeQg, Typ 43 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit
hcp90r450.pdf
Jun. 2023HCP90R450900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 10.7 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi
hcp90r800.pdf
Jun. 2023HCP90R800900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.8 100% Avalanche Tested Built-in ESD DiodeQg, Typ 17.4 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 10N60L-TF2-T
