HCS65R165ST Datasheet. Specs and Replacement
Type Designator: HCS65R165ST 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 47 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO220FT
HCS65R165ST substitution
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HCS65R165ST datasheet
hcs65r165st.pdf
Dec 2019 HCS65R165ST 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 20.4 A Excellent stability and uniformity RDS(on), max 0.165 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit TO-220FT SYMBOL ... See More ⇒
hcs65r450st.pdf
Sep 2020 HCS65R450ST 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 9.2 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 20 nC Application Package & Internal Circuit TO-220FT SYMBOL S... See More ⇒
hcs65r450s.pdf
Sep 2020 HCS65R450S 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 9.2 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 20 nC Application Package & Internal Circuit TO-220FS SYMBOL Sw... See More ⇒
Detailed specifications: HCP90R450, HCP90R800, HCS60R099, HCS60R099ST, HCS60R150ST, HCS60R260S, HCS60R260ST, HCS60R900S, AON6414A, HCS65R210ST, HCS65R450S, HCS65R450ST, HCS65R830ST, HCS70R180S, HCS70R230S, HCS70R600ST, HCS70R710ST
Keywords - HCS65R165ST MOSFET specs
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