All MOSFET. HCS65R450S Datasheet

 

HCS65R450S Datasheet and Replacement


   Type Designator: HCS65R450S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220FS
      - MOSFET Cross-Reference Search

 

HCS65R450S Datasheet (PDF)

 ..1. Size:419K  semihow
 hcs65r450s.pdf pdf_icon

HCS65R450S

Sep 2020HCS65R450S650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL Sw

 0.1. Size:421K  semihow
 hcs65r450st.pdf pdf_icon

HCS65R450S

Sep 2020HCS65R450ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 8.1. Size:425K  semihow
 hcs65r830st.pdf pdf_icon

HCS65R450S

Jan. 2021HCS65R830ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 0.83 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.2. Size:372K  semihow
 hcs65r165st.pdf pdf_icon

HCS65R450S

Dec 2019HCS65R165ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

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