HCS80R1K4S Datasheet. Specs and Replacement

Type Designator: HCS80R1K4S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO220FS

HCS80R1K4S substitution

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HCS80R1K4S datasheet

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 hcs80r1k4s.pdf pdf_icon

HCS80R1K4S

Sep 2020 HCS80R1K4S 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.0 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit TO-220FS SYMBOL Sw... See More ⇒

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 hcs80r1k4st.pdf pdf_icon

HCS80R1K4S

Sep 2020 HCS80R1K4ST 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.0 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit TO-220FT SYMBOL S... See More ⇒

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 hcs80r1k2s.pdf pdf_icon

HCS80R1K4S

Sep 2020 HCS80R1K2S 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit TO-220FS SYMBOL S... See More ⇒

 6.2. Size:399K  semihow
 hcs80r1k2st.pdf pdf_icon

HCS80R1K4S

Sep 2020 HCS80R1K2ST 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit TO-220FT SYMBOL ... See More ⇒

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Detailed specifications: HCS65R830ST, HCS70R180S, HCS70R230S, HCS70R600ST, HCS70R710ST, HCS70R910ST, HCS80R1K2S, HCS80R1K2ST, 2N7002, HCS80R1K4ST, HCS90R1K0S, HCS90R1K6S, HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910

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