HCS90R1K6S Datasheet. Specs and Replacement

Type Designator: HCS90R1K6S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO220FS

HCS90R1K6S substitution

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HCS90R1K6S datasheet

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 hcs90r1k6s.pdf pdf_icon

HCS90R1K6S

Apr. 2023 HCS90R1K6S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 3.8 A Excellent stability and uniformity RDS(on), max 1.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit TO-220FS SYMBOL S... See More ⇒

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 hcs90r1k0s.pdf pdf_icon

HCS90R1K6S

Apr. 2023 HCS90R1K0S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 1.0 100% Avalanche Tested Built-in ESD Diode Qg, Typ 13.7 nC Application Package & Internal Circuit TO-220FS SYMBOL ... See More ⇒

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 hcs90r450s.pdf pdf_icon

HCS90R1K6S

Apr. 2023 HCS90R450S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 10.7 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit TO-220FS SYMBOL ... See More ⇒

 8.2. Size:544K  semihow
 hcs90r800s.pdf pdf_icon

HCS90R1K6S

Apr. 2023 HCS90R800S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 6.7 A Excellent stability and uniformity RDS(on), max 0.8 100% Avalanche Tested Built-in ESD Diode Qg, Typ 17.4 nC Application Package & Internal Circuit TO-220FS SYMBOL ... See More ⇒

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Detailed specifications: HCS70R600ST, HCS70R710ST, HCS70R910ST, HCS80R1K2S, HCS80R1K2ST, HCS80R1K4S, HCS80R1K4ST, HCS90R1K0S, IRLB4132, HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910, HCT80R850, HCT90R1K4, HCU60R260

Keywords - HCS90R1K6S MOSFET specs

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