HCT70R1K1 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCT70R1K1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.3 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: SOT223
HCT70R1K1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCT70R1K1 Datasheet (PDF)
hct70r1k1.pdf
August 2020HCT70R1K1 700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.1 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplication Package & Internal Circuit Switch Mode Power
hct70r910.pdf
March 2020HCT70R910 700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 5.2 A Excellent stability and uniformityRDS(on), max 0.94 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplication Package & Internal Circuit Switch Mode Powe
hct7000m hct7000mtxv.pdf
Product Bulletin HCT7000MJanuary 1996N-Channel Enhancement Mode MOS TransistorType HCT7000M, HCT7000MTX, HCT7000MTXVFeatures Absolute Maximum RatingsDrain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V200mA IDGate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
