HCW60R290 Datasheet and Replacement
Type Designator: HCW60R290
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO263
HCW60R290 substitution
HCW60R290 Datasheet (PDF)
hcw60r290.pdf

Dec 2019HCW60R290600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 12.9 A Excellent stability and uniformityRDS(on), max 0.29 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-263 SYMBOL Swit
hcw60r190.pdf

Dec 2019HCW60R190600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 17.6 A Excellent stability and uniformityRDS(on), max 0.19 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-263 SYMBOL Swit
hcw60r150.pdf

Dec 2019HCW60R150600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.4 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-263 SYMBOL Swit
Datasheet: HCU70R710 , HCU70R910 , HCU80R1K2 , HCU80R1K4 , HCU90R1K0 , HCU90R1K4 , HCW60R150 , HCW60R190 , P60NF06 , HCW65R210 , HCW65R320 , HFA20N50U , HFA24N50G , HFB1N60F , HFC2N60U , HFD1N60F , HFD1N60SA .
History: SUD50P06-15L | IXFX13N100
Keywords - HCW60R290 MOSFET datasheet
HCW60R290 cross reference
HCW60R290 equivalent finder
HCW60R290 lookup
HCW60R290 substitution
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History: SUD50P06-15L | IXFX13N100



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