All MOSFET. HFD1N60SA Datasheet

 

HFD1N60SA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFD1N60SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.9 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 19.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: TO252A

 HFD1N60SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFD1N60SA Datasheet (PDF)

 ..1. Size:1138K  semihow
hfu1n60sa hfd1n60sa.pdf

HFD1N60SA
HFD1N60SA

Jan. 2022HFU1N60SA / HFD1N60SA600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 600 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 1.0 A Excellent Switching CharacteristicsRDS(on), Typ 9.3 100% Avalanche TestedQg, Typ 3.9 nC RoHS CompliantHFU1N60SA HFD1N60SASymbolTO-

 6.1. Size:195K  semihow
hfd1n60s hfu1n60s.pdf

HFD1N60SA
HFD1N60SA

Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T

 6.2. Size:195K  semihow
hfd1n60s.pdf

HFD1N60SA
HFD1N60SA

Sep 2009BVDSS = 600 VRDS(on) typ HFD1N60S / HFU1N60SID = 1.0 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD1N60S HFU1N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (T

 7.1. Size:208K  semihow
hfu1n60f hfd1n60f.pdf

HFD1N60SA
HFD1N60SA

Oct 2016HFU1N60F / HFD1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantHFU1N60F HFD1N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unless

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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