HFS10N65JS Datasheet. Specs and Replacement

Type Designator: HFS10N65JS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 36.3 nC

tr ⓘ - Rise Time: 30.9 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220FS

HFS10N65JS substitution

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HFS10N65JS datasheet

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 hfs10n65js.pdf pdf_icon

HFS10N65JS

Feb 2023 HFS10N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 10 A Excellent Switching Characteristics RDS(on), Typ 0.82 100% Avalanche Tested Qg, Typ 36.3 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum ... See More ⇒

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HFS10N65JS

March 2014 BVDSS = 650 V RDS(on) typ HFS10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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 hfs10n65u.pdf pdf_icon

HFS10N65JS

Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFS10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

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 hfs10n60u.pdf pdf_icon

HFS10N65JS

Oct 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

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Detailed specifications: HFI5N50S, HFI5N60S, HFP2N60F, HFP4N60F, HFP50N06A, HFP5N60F, HFP730F, HFP830F, IRFB31N20D, HFS10N80A, HFS12N65JS, HFS12N65SA, HFS18N50UT, HFS2N60F, HFS2N60FS, HFS3N80A, HFS4N60F

Keywords - HFS10N65JS MOSFET specs

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