All MOSFET. HFS10N65JS Datasheet

 

HFS10N65JS Datasheet and Replacement


   Type Designator: HFS10N65JS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36.3 nC
   tr ⓘ - Rise Time: 30.9 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220FS
 

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HFS10N65JS Datasheet (PDF)

 ..1. Size:634K  semihow
 hfs10n65js.pdf pdf_icon

HFS10N65JS

Feb 2023HFS10N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 10 A Excellent Switching CharacteristicsRDS(on), Typ 0.82 100% Avalanche TestedQg, Typ 36.3 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

 6.1. Size:159K  semihow
 hfs10n65s.pdf pdf_icon

HFS10N65JS

March 2014BVDSS = 650 VRDS(on) typ HFS10N65SID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area

 6.2. Size:302K  semihow
 hfs10n65u.pdf pdf_icon

HFS10N65JS

Oct 2013BVDSS = 650 VRDS(on) typ = 0.8 HFS10N65UID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

 7.1. Size:302K  semihow
 hfs10n60u.pdf pdf_icon

HFS10N65JS

Oct 2013BVDSS = 600 VRDS(on) typ = 0.67 HFS10N60UID = 9.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

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Datasheet: HFI5N50S , HFI5N60S , HFP2N60F , HFP4N60F , HFP50N06A , HFP5N60F , HFP730F , HFP830F , IRF730 , HFS10N80A , HFS12N65JS , HFS12N65SA , HFS18N50UT , HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F .

History: IRF7805Z

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