HFS2N60F Datasheet. Specs and Replacement

Type Designator: HFS2N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 6.5 nC

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO220F

HFS2N60F substitution

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HFS2N60F datasheet

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 hfp2n60f hfs2n60f.pdf pdf_icon

HFS2N60F

Oct 2016 HFP2N60F / HFS2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFP2N60F HFS2N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒

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HFS2N60F

Oct 2016 HFS2N60FS 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC Single Gauge Package TO-220FS Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Paramete... See More ⇒

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HFS2N60F

July 2005 BVDSS = 600 V RDS(on) typ HFS2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

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HFS2N60F

March 2014 BVDSS = 600 V RDS(on) typ HFS2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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Detailed specifications: HFP5N60F, HFP730F, HFP830F, HFS10N65JS, HFS10N80A, HFS12N65JS, HFS12N65SA, HFS18N50UT, IRFZ46N, HFS2N60FS, HFS3N80A, HFS4N60F, HFS4N60FS, HFS50N06A, HFS5N60F, HFS5N65JS, HFS5N65SA

Keywords - HFS2N60F MOSFET specs

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