All MOSFET. HFS2N60F Datasheet

 

HFS2N60F Datasheet and Replacement


   Type Designator: HFS2N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO220F
 

 HFS2N60F substitution

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HFS2N60F Datasheet (PDF)

 ..1. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf pdf_icon

HFS2N60F

Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 0.1. Size:356K  semihow
 hfs2n60fs.pdf pdf_icon

HFS2N60F

Oct 2016HFS2N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC Single Gauge Package TO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Paramete

 7.1. Size:150K  semihow
 hfs2n60.pdf pdf_icon

HFS2N60F

July 2005BVDSS = 600 VRDS(on) typ HFS2N60ID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS

 7.2. Size:163K  semihow
 hfs2n60s.pdf pdf_icon

HFS2N60F

March 2014BVDSS = 600 VRDS(on) typ HFS2N60SID = 2.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area

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Datasheet: HFP5N60F , HFP730F , HFP830F , HFS10N65JS , HFS10N80A , HFS12N65JS , HFS12N65SA , HFS18N50UT , RU7088R , HFS2N60FS , HFS3N80A , HFS4N60F , HFS4N60FS , HFS50N06A , HFS5N60F , HFS5N65JS , HFS5N65SA .

History: VBZB8205A

Keywords - HFS2N60F MOSFET datasheet

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