HFS4N60F Datasheet. Specs and Replacement

Type Designator: HFS4N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 8.5 nC

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: TO220F

HFS4N60F substitution

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HFS4N60F datasheet

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 hfp4n60f hfs4n60f.pdf pdf_icon

HFS4N60F

Oct 2016 HFP4N60F / HFS4N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC RoHS Compliant HFP4N60F HFS4N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒

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 hfs4n60fs.pdf pdf_icon

HFS4N60F

Oct 2016 HFS4N60FS 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC Single Gauge Package TO-220FS Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter... See More ⇒

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HFS4N60F

July 2005 BVDSS = 600 V RDS(on) typ HFS4N60 ID = 4.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

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 hfs4n50.pdf pdf_icon

HFS4N60F

July 2005 BVDSS = 500 V RDS(on) typ HFS4N50 ID = 3.4 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

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Detailed specifications: HFS10N65JS, HFS10N80A, HFS12N65JS, HFS12N65SA, HFS18N50UT, HFS2N60F, HFS2N60FS, HFS3N80A, IRF9640, HFS4N60FS, HFS50N06A, HFS5N60F, HFS5N65JS, HFS5N65SA, HFS730F, HFS730S, HFS7N80A

Keywords - HFS4N60F MOSFET specs

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