HFS4N60F
MOSFET. Datasheet pdf. Equivalent
Type Designator: HFS4N60F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.5
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2
Ohm
Package:
TO220F
HFS4N60F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFS4N60F
Datasheet (PDF)
..1. Size:406K semihow
hfp4n60f hfs4n60f.pdf
Oct 2016HFP4N60F / HFS4N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC RoHS CompliantHFP4N60F HFS4N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles
0.1. Size:369K semihow
hfs4n60fs.pdf
Oct 2016HFS4N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC Single Gauge PackageTO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter
7.1. Size:177K semihow
hfs4n60.pdf
July 2005BVDSS = 600 VRDS(on) typ HFS4N60ID = 4.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(
9.1. Size:236K semihow
hfs4n50.pdf
July 2005BVDSS = 500 VRDS(on) typ HFS4N50ID = 3.4 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lo
9.2. Size:191K semihow
hfs4n90.pdf
March 2014BVDSS = 900 VRDS(on) typ HFS4N90ID = 4.0 A900V N-Channel MOSFETTO-220FFEATURES11 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area
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