HFS5N60F Datasheet. Specs and Replacement

Type Designator: HFS5N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO220F

HFS5N60F substitution

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HFS5N60F datasheet

 ..1. Size:408K  semihow
 hfp5n60f hfs5n60f.pdf pdf_icon

HFS5N60F

Oct 2016 HFP5N60F / HFS5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFP5N60F HFS5N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unle... See More ⇒

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 hfs5n60u.pdf pdf_icon

HFS5N60F

May 2012 BVDSS = 600 V RDS(on) typ HFS5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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 hfs5n60s.pdf pdf_icon

HFS5N60F

Aug 2007 BVDSS = 600 V RDS(on) typ HFS5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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 hfs5n65sa.pdf pdf_icon

HFS5N60F

Dec. 2021 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65SA ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 14.2 nC (Typ.) Extended Safe Op... See More ⇒

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Detailed specifications: HFS12N65SA, HFS18N50UT, HFS2N60F, HFS2N60FS, HFS3N80A, HFS4N60F, HFS4N60FS, HFS50N06A, K2611, HFS5N65JS, HFS5N65SA, HFS730F, HFS730S, HFS7N80A, HFS830F, HFS8N60UA, HFS8N65JS

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