HFU1N60S Datasheet. Specs and Replacement

Type Designator: HFU1N60S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: IPAK

HFU1N60S substitution

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HFU1N60S datasheet

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HFU1N60S

Sep 2009 BVDSS = 600 V RDS(on) typ HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD1N60S HFU1N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 3.0 nC (T... See More ⇒

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 hfu1n60sa hfd1n60sa.pdf pdf_icon

HFU1N60S

Jan. 2022 HFU1N60SA / HFD1N60SA 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 600 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 1.0 A Excellent Switching Characteristics RDS(on), Typ 9.3 100% Avalanche Tested Qg, Typ 3.9 nC RoHS Compliant HFU1N60SA HFD1N60SA Symbol TO-... See More ⇒

 7.1. Size:244K  vishay
 irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

HFU1N60S

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing... See More ⇒

 7.2. Size:269K  vishay
 irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

HFU1N60S

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing... See More ⇒

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Detailed specifications: HFS7N80A, HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA, HFS9N90A, HFT1N60F, HFU1N60F, IRF840, HFU1N60SA, HFU2N60F, HFU2N60S, HFU2N60U, HFU4N50, HFU5N40, HFU5N50S, HFU5N50U

Keywords - HFU1N60S MOSFET specs

 HFU1N60S cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.