HRLD125N06K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLD125N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: DPAK
HRLD125N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLD125N06K Datasheet (PDF)
hrld125n06k hrlu125n06k.pdf
Oct 2015BVDSS = 60 VRDS(on) typ = 10 HRLD125N06K / HRLU125N06K ID = 70 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD125N06K HRU125N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
hrld1b8n10k hrlu1b8n10k.pdf
Sep 2015BVDSS = 100 VRDS(on) typ = HRLD1B8N10K / HRLU1B8N10K ID = 2.7 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD1B8N10K HRLU1B8N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 11.5 nC (Typ.) Extended Safe Operating Area Lower R
hrld150n10k hrlu150n10k.pdf
Mar 2016BVDSS = 100 VRDS(on) typ =13 HRLD150N10K / HRLU150N10K ID = 70 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRLD150N10K HRLU150N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(O
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
