All MOSFET. HRLF150N10K Datasheet

 

HRLF150N10K Datasheet and Replacement


   Type Designator: HRLF150N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: 8DFN5X6
 

 HRLF150N10K substitution

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HRLF150N10K Datasheet (PDF)

 ..1. Size:228K  semihow
 hrlf150n10k.pdf pdf_icon

HRLF150N10K

Jan 2016HRLF150N10K100V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 100 V ID = 50 A1 Unrivalled Gate Charge : 80 nC (Typ.) Lower RDS(ON) : 13 (Typ.) @VGS=10V Lower RDS(ON) : 14 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VVGS Gate-Source Voltage

 9.1. Size:715K  semihow
 hrlf190n03k.pdf pdf_icon

HRLF150N10K

July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu

 9.2. Size:775K  semihow
 hrlf110n03k.pdf pdf_icon

HRLF150N10K

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

 9.3. Size:212K  semihow
 hrlf180n10k.pdf pdf_icon

HRLF150N10K

Jan 2016HRLF180N10K100V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 100 V ID = 40 A1 Unrivalled Gate Charge : 94 nC (Typ.) Lower RDS(ON) : 16 (Typ.) @VGS=10V Lower RDS(ON) : 17 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VVGS Gate-Source Voltage

SHOW MORE

Datasheet: HRLD370N10K , HRLD40N04K , HRLD55N03K , HRLD72N06 , HRLD80N06K , HRLE320N03K , HRLF110N03K , HRLF125N06K , TK10A60D , HRLF180N10K , HRLF190N03K , HRLF33N03K , HRLF55N03K , HRLF72N06 , HRLF80N06K , HRLFS136N10P , HRLFS190N03K .

History: IPI100N08N3G

Keywords - HRLF150N10K MOSFET datasheet

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