HRLF190N03K Datasheet. Specs and Replacement

Type Designator: HRLF190N03K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 12 nC

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: 8DFN5X6

HRLF190N03K substitution

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HRLF190N03K datasheet

 ..1. Size:715K  semihow
 hrlf190n03k.pdf pdf_icon

HRLF190N03K

July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu... See More ⇒

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 hrlf150n10k.pdf pdf_icon

HRLF190N03K

Jan 2016 HRLF150N10K 100V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 100 V ID = 50 A 1 Unrivalled Gate Charge 80 nC (Typ.) Lower RDS(ON) 13 (Typ.) @VGS=10V Lower RDS(ON) 14 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage... See More ⇒

 9.2. Size:775K  semihow
 hrlf110n03k.pdf pdf_icon

HRLF190N03K

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci... See More ⇒

 9.3. Size:212K  semihow
 hrlf180n10k.pdf pdf_icon

HRLF190N03K

Jan 2016 HRLF180N10K 100V N-Channel Trench MOSFET 8DFN 5x6 FEATURES BVDSS = 100 V ID = 40 A 1 Unrivalled Gate Charge 94 nC (Typ.) Lower RDS(ON) 16 (Typ.) @VGS=10V Lower RDS(ON) 17 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage... See More ⇒

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Detailed specifications: HRLD55N03K, HRLD72N06, HRLD80N06K, HRLE320N03K, HRLF110N03K, HRLF125N06K, HRLF150N10K, HRLF180N10K, 12N60, HRLF33N03K, HRLF55N03K, HRLF72N06, HRLF80N06K, HRLFS136N10P, HRLFS190N03K, HRLFS55N03K, HRLFS72N06P

Keywords - HRLF190N03K MOSFET specs

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