All MOSFET. HRLF190N03K Datasheet

 

HRLF190N03K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRLF190N03K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 31 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: 8DFN5X6

 HRLF190N03K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRLF190N03K Datasheet (PDF)

 ..1. Size:715K  semihow
 hrlf190n03k.pdf

HRLF190N03K HRLF190N03K

July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu

 9.1. Size:228K  semihow
 hrlf150n10k.pdf

HRLF190N03K HRLF190N03K

Jan 2016HRLF150N10K100V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 100 V ID = 50 A1 Unrivalled Gate Charge : 80 nC (Typ.) Lower RDS(ON) : 13 (Typ.) @VGS=10V Lower RDS(ON) : 14 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VVGS Gate-Source Voltage

 9.2. Size:775K  semihow
 hrlf110n03k.pdf

HRLF190N03K HRLF190N03K

July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci

 9.3. Size:212K  semihow
 hrlf180n10k.pdf

HRLF190N03K HRLF190N03K

Jan 2016HRLF180N10K100V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 100 V ID = 40 A1 Unrivalled Gate Charge : 94 nC (Typ.) Lower RDS(ON) : 16 (Typ.) @VGS=10V Lower RDS(ON) : 17 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VVGS Gate-Source Voltage

 9.4. Size:184K  semihow
 hrlf125n06k.pdf

HRLF190N03K HRLF190N03K

Jan 2016HRLF125N06K60V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 60 V ID = 52 A1 Unrivalled Gate Charge : 50 nC (Typ.) Lower RDS(ON) : 10 (Typ.) @VGS=10V Lower RDS(ON) : 12 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 60 VVGS Gate-Source Voltage 2

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FDI3632

 

 
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