HRLFS55N03K
MOSFET. Datasheet pdf. Equivalent
Type Designator: HRLFS55N03K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 66
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 315
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package: 8DFN3X3
HRLFS55N03K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRLFS55N03K
Datasheet (PDF)
..1. Size:453K semihow
hrlfs55n03k.pdf
Feb 2020HRLFS55N03K30V N-Channel Trench MOSFETFeatures Key ParametersParameter Value UnitLow Dense Cell Design, Logic LevelBVDSS 30 VReliable and RuggedID 66 AAdvanced Trench Process TechnologyRDS(on), typ @10V 4.2 m100% UIS Tested, 100% Rg TestedRDS(on), typ @4.5V 5.7 mLead free, Halogen FreeApplicationPackage & Internal CircuitPower Management in Inverter S
9.1. Size:239K semihow
hrlfs190n03k.pdf
Jan 2016HRLFS190N03K30V N-Channel Trench MOSFET8DFN 3x3FEATURES BVDSS = 30 V ID = 28 A1 Unrivalled Gate Charge : 12 nC (Typ.) Lower RDS(ON) : 16 (Typ.) @VGS=10V Lower RDS(ON) : 20 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 30 VVGS Gate-Source Voltage
9.2. Size:369K semihow
hrlfs72n06p.pdf
March 2020HRLFS72N06P65V N-Channel Trench MOSFETFeatures Key ParametersParameter Value UnitHigh Speed Power Switching, Logic LevelBVDSS 65 VEnhanced Body diode dv/dt capabilityID 58 AEnhanced Avalanche RuggednessRDS(on), typ @10V 6.0 m100% UIS Tested, 100% Rg TestedRDS(on), typ @4.5V 9.6 mLead free, Halogen FreeApplicationPackage & Internal CircuitSynchronous
9.3. Size:586K semihow
hrlfs90n03k.pdf
June 2017 HRLFS90N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci
9.4. Size:417K semihow
hrlfs136n10p.pdf
May 2020HRLFS136N10P100V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Speed Power Switching, Logic LevelBVDSS 100 V Enhanced Body diode dv/dt capabilityID 48 A Enhanced Avalanche RuggednessRDS(on), typ @10V 11.3 m 100% UIS Tested, 100% Rg Tested Lead free, Halogen FreeRDS(on), typ @4.5V 16.7 mApplicationPackage & Intern
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.