HRLFS90N03K Datasheet. Specs and Replacement

Type Designator: HRLFS90N03K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: 8DFN3X3

HRLFS90N03K substitution

- MOSFET ⓘ Cross-Reference Search

 

HRLFS90N03K datasheet

 ..1. Size:586K  semihow
hrlfs90n03k.pdf pdf_icon

HRLFS90N03K

June 2017 HRLFS90N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci... See More ⇒

 9.1. Size:239K  semihow
hrlfs190n03k.pdf pdf_icon

HRLFS90N03K

Jan 2016 HRLFS190N03K 30V N-Channel Trench MOSFET 8DFN 3x3 FEATURES BVDSS = 30 V ID = 28 A 1 Unrivalled Gate Charge 12 nC (Typ.) Lower RDS(ON) 16 (Typ.) @VGS=10V Lower RDS(ON) 20 (Typ.) @VGS=4.5V 100% Avalanche Tested Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ... See More ⇒

 9.2. Size:369K  semihow
hrlfs72n06p.pdf pdf_icon

HRLFS90N03K

March 2020 HRLFS72N06P 65V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit High Speed Power Switching, Logic Level BVDSS 65 V Enhanced Body diode dv/dt capability ID 58 A Enhanced Avalanche Ruggedness RDS(on), typ @10V 6.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 9.6 m Lead free, Halogen Free Application Package & Internal Circuit Synchronous... See More ⇒

 9.3. Size:453K  semihow
hrlfs55n03k.pdf pdf_icon

HRLFS90N03K

Feb 2020 HRLFS55N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 66 A Advanced Trench Process Technology RDS(on), typ @10V 4.2 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 5.7 m Lead free, Halogen Free Application Package & Internal Circuit Power Management in Inverter S... See More ⇒

Detailed specifications: HRLF33N03K, HRLF55N03K, HRLF72N06, HRLF80N06K, HRLFS136N10P, HRLFS190N03K, HRLFS55N03K, HRLFS72N06P, STP80NF70, HRLO110N03K, HRLO125N06K, HRLO180N10K, HRLO250N10K, HRLO72N06, HRLP125N06K, HRLP150N10K, HRLP250N10K

Keywords - HRLFS90N03K MOSFET specs

 HRLFS90N03K cross reference

 HRLFS90N03K equivalent finder

 HRLFS90N03K pdf lookup

 HRLFS90N03K substitution

 HRLFS90N03K replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility