FDMS7692A
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS7692A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 27
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
POWER56
FDMS7692A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS7692A
Datasheet (PDF)
..1. Size:406K 1
fdms7692a.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..2. Size:334K fairchild semi
fdms7692a.pdf
June 2009FDMS7692AN-Channel PowerTrench MOSFET 30 V, 8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package and S
6.1. Size:416K 1
fdms7692.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.2. Size:334K fairchild semi
fdms7692.pdf
June 2009FDMS7692N-Channel PowerTrench MOSFET 30 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 Aringing of DC/DC converters using either synchronous or Advanced Package an
7.1. Size:250K fairchild semi
fdms7698.pdf
May 2011FDMS7698N-Channel PowerTrench MOSFET 30 V, 22 A, 10 mFeatures General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 15 m at VGS = 4.5 V, ID = 11.0 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Package
7.2. Size:269K fairchild semi
fdms7694.pdf
July 2011FDMS7694N-Channel PowerTrench MOSFET 30 V, 9.5 mFeatures General Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.5 Aringing of DC/DC converters using either synchronous or Advanced Package
7.3. Size:385K onsemi
fdms7698.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.4. Size:316K onsemi
fdms7694.pdf
FDMS7694N-Channel PowerTrench MOSFETGeneral Description30 V, 9.5 mThis N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.2 Aconventional switching PWM controllers.It has been optimized Max rDS(on) = 14.5
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