HRP35N06K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRP35N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 210 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 190 nC
Rise Time (tr): 140 nS
Drain-Source Capacitance (Cd): 1300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
Package: TO220
HRP35N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRP35N06K Datasheet (PDF)
hrp35n06k.pdf
December 2014 BVDSS = 60 V RDS(on) typ = 2.8m HRP35N06K ID = 210 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 190 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.8 m (Typ.
hrp35n04k.pdf
December 2014 BVDSS = 40 V RDS(on) typ = 2.9m HRP35N04K ID = 150 A 40V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.9 m (Typ.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CJP71N90
