OSG07N65PF Datasheet. Specs and Replacement

Type Designator: OSG07N65PF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.8 nS

Cossⓘ - Output Capacitance: 24.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

OSG07N65PF substitution

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OSG07N65PF datasheet

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OSG07N65PF

OSG07N65PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi... See More ⇒

 6.1. Size:837K  oriental semi
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OSG07N65PF

OSG07N65AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi... See More ⇒

 6.2. Size:842K  oriental semi
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OSG07N65PF

OSG07N65FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi... See More ⇒

 6.3. Size:878K  oriental semi
 osg07n65df.pdf pdf_icon

OSG07N65PF

OSG07N65DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi... See More ⇒

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Detailed specifications: HRW370N10K, HN75N09AP, TMU6N70, TMD6N70G, TMU6N70G, OSG07N65AF, OSG07N65DF, OSG07N65FF, 2N7000, OSG50R1K5AF, OSG50R1K5DF, OSG50R1K5FF, OSG50R1K5PF, OSG50R500AF, OSG50R500DF, OSG50R500FF, OSG50R500PF

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