All MOSFET. OSG50R500DF Datasheet

 

OSG50R500DF Datasheet and Replacement


   Type Designator: OSG50R500DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 38.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO252
 

 OSG50R500DF substitution

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OSG50R500DF Datasheet (PDF)

 ..1. Size:403K  oriental semi
 osg50r500df.pdf pdf_icon

OSG50R500DF

OSG50R500DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:376K  oriental semi
 osg50r500ff.pdf pdf_icon

OSG50R500DF

OSG50R500FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:376K  oriental semi
 osg50r500af.pdf pdf_icon

OSG50R500DF

OSG50R500AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:402K  oriental semi
 osg50r500pf.pdf pdf_icon

OSG50R500DF

OSG50R500PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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Datasheet: OSG07N65DF , OSG07N65FF , OSG07N65PF , OSG50R1K5AF , OSG50R1K5DF , OSG50R1K5FF , OSG50R1K5PF , OSG50R500AF , IRF9540 , OSG50R500FF , OSG50R500PF , OSG55R028HF , OSG55R028HTF , OSG55R030HZF , OSG55R070FF , OSG55R070HF , OSG55R074FZF .

History: STP95N04 | 2SK3430-S

Keywords - OSG50R500DF MOSFET datasheet

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